Association Journal of CSIAM
Supervised by Ministry of Education of PRC
Sponsored by Xi'an Jiaotong University
ISSN 1005-3085  CN 61-1269/O1

Chinese Journal of Engineering Mathematics ›› 2024, Vol. 41 ›› Issue (6): 1053-1073.doi: 10.3969/j.issn.1005-3085.2024.06.005

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Passivity of Memristive Bidirectional Associative Memory Neural Networks with Multi-proportional Delays

WANG Fen   

  1. School of Financial Mathematics and Statistics, Guangdong University of Finance, Guangzhou 510521
  • Received:2022-05-21 Accepted:2022-12-29 Online:2024-12-15 Published:2024-12-15
  • Supported by:
    The National Natural Science Foundation of China (61907010); the Special Projects in Key Areas of Colleges and Universities in Guangdong Provincial Department of Education (2020ZDZX3051).

Abstract:

Under the framework of Filippov solutions, passivity analysis of memristive BAM neural networks with multi-proportional delays can be guaranteed by constructing suitable Lyapunov-Krasovskii functional, Jensen's inequality, Lemma of Schur Complement, the theory of set-valued maps and functional differential equations with discontinuous right-hand sides. Moreover, the terms of multi-proportional delays are deformed by nonlinear transformation in this paper. We have successfully established sufficient conditions for the passivity of BAM memristive neural networks with multiple proportional delays. These conditions not only reveal the relationship between system parameters and passivity, but also provide theoretical basis and guidance for designing stable, reliable, and well passive BAM memristive neural networks. Finally, two numerical examples are exploited to show the effectiveness of the derived LMI-based passivity conditions. The work presented in this article not only deepens the understanding of the dynamic behavior of BAM memristive neural networks, but also provides a new perspective for the design and optimization of this type of network in practical applications.

Key words: passivity, multi-proportional delays, neural networks, memristor

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